? semiconductor components industries, llc, 2003 july, 2003 ? rev. 0 1 publication order number: df3a6.8fut1/d df3a6.8fut1 preferred device zener transient voltage suppressor sc?70/sot?323 dual common anode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. their dual junction common anode design protects two separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features: ? sc?70 package allows two separate unidirectional configurations ? low leakage < 1.0 a @ 5 volt ? breakdown voltage: 6.4?7.2 volt @ 5.0 ma ? esd protection meeting:16 kv human body model 30 kv contact = iec61000?4?2 ? peak power: 24 w @ 1.0 ms (unidirectional), per figure 1 ? peak power: 150 w @ 20 s (unidirectional), per figure 2 mechanical characteristics: ? void free, transfer?molded, thermosetting plastic case ? corrosion resistant finish, easily solderable ? package designed for optimal automated board assembly ? small package size for high density applications maximum ratings rating symbol value unit steady state power dissipation derate above 25 c (note 1) p d 200 1.6 mw mw/ c thermal resistance junction to ambient r q ja 618 c/w operating junction and storage temperature range t j , t stg ? 55 to +150 c peak power dissipation @ 1.0 ms (note 2) @ t a = 25 c p pk 20 w peak power dissipation @ 20 s (note 3) @ t a = 25 c p pk 150 w esd discharge mil std 883c ? method 3015?6 iec61000?4?2, air discharge iec61000?4?2, contact discharge v pp 16 30 30 kv 1. mounted on fr?5 board = 1.0 x 0.75 x 0.062 in. 2. non?repetitive pulse per figure 1. 3. non?repetitive pulse per figure 2. sc?70/sot?323 case 419 style 4 1 3 2 1 2 pin 1. cathode 2. cathode 3. anode device package shipping ordering information df3a6.8fut1 sc?70 3000/tape & reel 68 marking diagram m = date code m preferred devices are recommended choices for future use and best overall value. http://onsemi.com
df3a6.8fut1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f z zt maximum zener impedance @ i zt z zk maximum zener impedance @ i zk uni?directional tvs i pp i f v i i r i t v rwm v c v br v f electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) parameter symbol conditions min typ max unit forward voltage v f i f = 10 ma 0.8 0.9 v zener voltage (note 4) v z i zt = 5 ma 6.4 6.8 7.2 v operating resistance (note 5) z zk i zk = 0.5 ma 200 w z zt i zt = 5 ma 50 w reverse current i r1 v rwm = 5 v 0.5 a clamping voltage v c i pp = 2.0 a (figure 1) i pp = 9.37 a (figure 2) 9.6 16 v v esd protection human body model (hbm) contact ? iec61000?4?2 air discharge 16 30 30 kv 4. v z measured at pulse test current i zt at an ambient temperature of 25 c. 5. z zt and z zk is measured by dividing the ac voltage drop across the device by the ac current supplied. ac frequency = 1.0 khz.
df3a6.8fut1 http://onsemi.com 3 typical characteristics figure 1. 10 1000 s pulse waveform value (%) 100 50 0 01234 t, time (ms) t r t p pulse width (t p ) is defined as that point where the peak current decays to 50%of i rsm . t r 10 s half value e i rs m 2 peak value e i rsm figure 2. 8 20 s pulse waveform figure 3. zener voltage vs. zener current figure 4. forward voltage vs. forward current 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s figure 5. capacitance vs. bias voltage figure 6. steady state power derating curve 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 p d , power dissipation (mw) t a , ambient temperature ( c) 100 v, bias voltage (v) c, capacitance (pf) 50 40 30 20 10 0 0123456 90 80 70 60 f = 1 mhz t a = 25 c unidirectional pin 1/2?3 bidirectional pin 1?2 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 200 180 160 140 120 20 0 i f , forward current (ma) v f , forward voltage (v) 40 60 80 100 forward voltage is measured with a pulse test current i f at 25 c 6 6.2 6.4 6.6 6.8 7 7.2 8 20.01 18.01 16.01 14.01 12.01 2.01 0 i zt , zener current (ma) v z , zener voltage (v) 4.01 6.01 8.01 10.01 7.4 7.6 7.8 reverse voltage is measured with a pulse test current i t at 25 c
df3a6.8fut1 http://onsemi.com 4 package dimensions sc?70 (sot?323) case 419?04 issue l style 4: pin 1. cathode 2. cathode 3. anode c n a l d g s b h j k 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.80 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 0.05 (0.002) on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. df3a6.8fut1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com n. american technical support : 800?282?9855 toll free usa/canada
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